Отправить статью по E-mail The relationship between the defectness of emitting nanoheterostructures of green InGaN/GaN LEDs and their threshold current values
- Авторы: Sergeev V.1,2, Frolov I.1, Radaev O.1,2
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Учреждения:
- Ulyanovsk Branch of Kotelnikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences
- Ulyanovsk State Technical University
- Выпуск: Том 43, № 2 (2017)
- Страницы: 224-226
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7850/article/view/203646
- DOI: https://doi.org/10.1134/S1063785017020250
- ID: 203646
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Аннотация
It is shown that the threshold current of green InGaN/GaN light-emitting diodes (LEDs) can be used for evaluating quality of their light-emitting nanoheterostructures.. The threshold current exhibits correlation with the value of operating current corresponding to the maximum of the external quantum efficiency of LEDs. It has been found that LEDs with high threshold currents tested in the dc regime exhibit faster degradation than devices with lower threshold currents.
Об авторах
V. Sergeev
Ulyanovsk Branch of Kotelnikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences; Ulyanovsk State Technical University
Email: ilya-frolov88@mail.ru
Россия, Ulyanovsk, 432071; Ulyanovsk, 432027
I. Frolov
Ulyanovsk Branch of Kotelnikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences
Автор, ответственный за переписку.
Email: ilya-frolov88@mail.ru
Россия, Ulyanovsk, 432071
O. Radaev
Ulyanovsk Branch of Kotelnikov Institute of Radio-Engineering and Electronics of Russian Academy of Sciences; Ulyanovsk State Technical University
Email: ilya-frolov88@mail.ru
Россия, Ulyanovsk, 432071; Ulyanovsk, 432027
