Email this article Electronic and Optical Properties of GaAlAs/GaAs Thin Films
- Authors: Umirzakov B.E.1, Donaev S.B.1, Mustafaeva N.M.1
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Affiliations:
- Karimov Tashkent State Technical University
- Issue: Vol 64, No 10 (2019)
- Pages: 1506-1508
- Section: Solid State Electronics
- URL: https://journals.rcsi.science/1063-7842/article/view/204275
- DOI: https://doi.org/10.1134/S1063784219100220
- ID: 204275
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Abstract
It has been shown that the formation of GaAlAs nanofilms on a GaAs surface leads to an increase in the emission coefficient of true secondary electrons and in the quantum yield of photoelectrons, which can be accounted for by the difference of the escape depth of true secondary electrons for GaAs and GaAlAs.
About the authors
B. E. Umirzakov
Karimov Tashkent State Technical University
Email: sardor.donaev@gmail.com
Uzbekistan, Tashkent, 100095
S. B. Donaev
Karimov Tashkent State Technical University
Author for correspondence.
Email: sardor.donaev@gmail.com
Uzbekistan, Tashkent, 100095
N. M. Mustafaeva
Karimov Tashkent State Technical University
Email: sardor.donaev@gmail.com
Uzbekistan, Tashkent, 100095
