Electronic and Optical Properties of GaAlAs/GaAs Thin Films
- 作者: Umirzakov B.1, Donaev S.1, Mustafaeva N.1
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隶属关系:
- Karimov Tashkent State Technical University
- 期: 卷 64, 编号 10 (2019)
- 页面: 1506-1508
- 栏目: Solid State Electronics
- URL: https://journals.rcsi.science/1063-7842/article/view/204275
- DOI: https://doi.org/10.1134/S1063784219100220
- ID: 204275
如何引用文章
详细
It has been shown that the formation of GaAlAs nanofilms on a GaAs surface leads to an increase in the emission coefficient of true secondary electrons and in the quantum yield of photoelectrons, which can be accounted for by the difference of the escape depth of true secondary electrons for GaAs and GaAlAs.
作者简介
B. Umirzakov
Karimov Tashkent State Technical University
Email: sardor.donaev@gmail.com
乌兹别克斯坦, Tashkent, 100095
S. Donaev
Karimov Tashkent State Technical University
编辑信件的主要联系方式.
Email: sardor.donaev@gmail.com
乌兹别克斯坦, Tashkent, 100095
N. Mustafaeva
Karimov Tashkent State Technical University
Email: sardor.donaev@gmail.com
乌兹别克斯坦, Tashkent, 100095