Electronic and Optical Properties of GaAlAs/GaAs Thin Films
- Авторы: Umirzakov B.1, Donaev S.1, Mustafaeva N.1
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Учреждения:
- Karimov Tashkent State Technical University
- Выпуск: Том 64, № 10 (2019)
- Страницы: 1506-1508
- Раздел: Solid State Electronics
- URL: https://journals.rcsi.science/1063-7842/article/view/204275
- DOI: https://doi.org/10.1134/S1063784219100220
- ID: 204275
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Аннотация
It has been shown that the formation of GaAlAs nanofilms on a GaAs surface leads to an increase in the emission coefficient of true secondary electrons and in the quantum yield of photoelectrons, which can be accounted for by the difference of the escape depth of true secondary electrons for GaAs and GaAlAs.
Об авторах
B. Umirzakov
Karimov Tashkent State Technical University
Email: sardor.donaev@gmail.com
Узбекистан, Tashkent, 100095
S. Donaev
Karimov Tashkent State Technical University
Автор, ответственный за переписку.
Email: sardor.donaev@gmail.com
Узбекистан, Tashkent, 100095
N. Mustafaeva
Karimov Tashkent State Technical University
Email: sardor.donaev@gmail.com
Узбекистан, Tashkent, 100095