Electronic and Optical Properties of GaAlAs/GaAs Thin Films
- Авторлар: Umirzakov B.1, Donaev S.1, Mustafaeva N.1
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Мекемелер:
- Karimov Tashkent State Technical University
- Шығарылым: Том 64, № 10 (2019)
- Беттер: 1506-1508
- Бөлім: Solid State Electronics
- URL: https://journals.rcsi.science/1063-7842/article/view/204275
- DOI: https://doi.org/10.1134/S1063784219100220
- ID: 204275
Дәйексөз келтіру
Аннотация
It has been shown that the formation of GaAlAs nanofilms on a GaAs surface leads to an increase in the emission coefficient of true secondary electrons and in the quantum yield of photoelectrons, which can be accounted for by the difference of the escape depth of true secondary electrons for GaAs and GaAlAs.
Авторлар туралы
B. Umirzakov
Karimov Tashkent State Technical University
Email: sardor.donaev@gmail.com
Өзбекстан, Tashkent, 100095
S. Donaev
Karimov Tashkent State Technical University
Хат алмасуға жауапты Автор.
Email: sardor.donaev@gmail.com
Өзбекстан, Tashkent, 100095
N. Mustafaeva
Karimov Tashkent State Technical University
Email: sardor.donaev@gmail.com
Өзбекстан, Tashkent, 100095