Enviar artigo por via de e-mail Electronic and Optical Properties of GaAlAs/GaAs Thin Films
- Autores: Umirzakov B.1, Donaev S.1, Mustafaeva N.1
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Afiliações:
- Karimov Tashkent State Technical University
- Edição: Volume 64, Nº 10 (2019)
- Páginas: 1506-1508
- Seção: Solid State Electronics
- URL: https://journals.rcsi.science/1063-7842/article/view/204275
- DOI: https://doi.org/10.1134/S1063784219100220
- ID: 204275
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Resumo
It has been shown that the formation of GaAlAs nanofilms on a GaAs surface leads to an increase in the emission coefficient of true secondary electrons and in the quantum yield of photoelectrons, which can be accounted for by the difference of the escape depth of true secondary electrons for GaAs and GaAlAs.
Sobre autores
B. Umirzakov
Karimov Tashkent State Technical University
Email: sardor.donaev@gmail.com
Uzbequistão, Tashkent, 100095
S. Donaev
Karimov Tashkent State Technical University
Autor responsável pela correspondência
Email: sardor.donaev@gmail.com
Uzbequistão, Tashkent, 100095
N. Mustafaeva
Karimov Tashkent State Technical University
Email: sardor.donaev@gmail.com
Uzbequistão, Tashkent, 100095
