Отправить статью по E-mail Ion-Beam Crystallization of InGaAs Island Nanostructures on GaAs Substrates
- Авторы: Lunina M.L.1, Lunin L.S.1,2, Sysoev I.A.3, Gusev D.A.3, Kazakova A.E.2
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Учреждения:
- Southern Scientific Center, Russian Academy of Sciences
- South-Russian State Technical University
- North-Caucasus Federal University
- Выпуск: Том 64, № 4 (2019)
- Страницы: 649-655
- Раздел: Surface and Thin Films
- URL: https://journals.rcsi.science/1063-7745/article/view/194142
- DOI: https://doi.org/10.1134/S1063774519040126
- ID: 194142
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Аннотация
The possibility of growing arrays of InxGa1 – xAs nanocrystals on GaAs substrates by ion-beam deposition is experimentally shown. The influence of the ion energy, current density, and deposition time of sputtered materials on the height, lateral size, and density of arrays of InxGa1 – xAs nanocrystals is investigated. The possibilities of changing controllably the deposition parameters of InxGa1 – xAs(GaAs) nanocrystals are analyzed. The technological growth parameters of InGaAs nanofilms on GaAs are determined. The composition, structural quality, and photoluminescence of InxGa1 – xAs nanocrystals and films grown on GaAs are studied.
Об авторах
M. Lunina
Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
Россия, Rostov-on-Don, 344006
L. Lunin
Southern Scientific Center, Russian Academy of Sciences; South-Russian State Technical University
Автор, ответственный за переписку.
Email: lunin_ls@mail.ru
Россия, Rostov-on-Don, 344006; Novocherkassk, 346400
I. Sysoev
North-Caucasus Federal University
Email: lunin_ls@mail.ru
Россия, Stavropol, 355029
D. Gusev
North-Caucasus Federal University
Email: lunin_ls@mail.ru
Россия, Stavropol, 355029
A. Kazakova
South-Russian State Technical University
Email: lunin_ls@mail.ru
Россия, Novocherkassk, 346400
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