Ion-Beam Crystallization of InGaAs Island Nanostructures on GaAs Substrates


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The possibility of growing arrays of InxGa1 – xAs nanocrystals on GaAs substrates by ion-beam deposition is experimentally shown. The influence of the ion energy, current density, and deposition time of sputtered materials on the height, lateral size, and density of arrays of InxGa1 – xAs nanocrystals is investigated. The possibilities of changing controllably the deposition parameters of InxGa1 – xAs(GaAs) nanocrystals are analyzed. The technological growth parameters of InGaAs nanofilms on GaAs are determined. The composition, structural quality, and photoluminescence of InxGa1 – xAs nanocrystals and films grown on GaAs are studied.

作者简介

M. Lunina

Southern Scientific Center, Russian Academy of Sciences

Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006

L. Lunin

Southern Scientific Center, Russian Academy of Sciences; South-Russian State Technical University

编辑信件的主要联系方式.
Email: lunin_ls@mail.ru
俄罗斯联邦, Rostov-on-Don, 344006; Novocherkassk, 346400

I. Sysoev

North-Caucasus Federal University

Email: lunin_ls@mail.ru
俄罗斯联邦, Stavropol, 355029

D. Gusev

North-Caucasus Federal University

Email: lunin_ls@mail.ru
俄罗斯联邦, Stavropol, 355029

A. Kazakova

South-Russian State Technical University

Email: lunin_ls@mail.ru
俄罗斯联邦, Novocherkassk, 346400

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