Ion-Beam Crystallization of InGaAs Island Nanostructures on GaAs Substrates
- Authors: Lunina M.L.1, Lunin L.S.1,2, Sysoev I.A.3, Gusev D.A.3, Kazakova A.E.2
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Affiliations:
- Southern Scientific Center, Russian Academy of Sciences
- South-Russian State Technical University
- North-Caucasus Federal University
- Issue: Vol 64, No 4 (2019)
- Pages: 649-655
- Section: Surface and Thin Films
- URL: https://journals.rcsi.science/1063-7745/article/view/194142
- DOI: https://doi.org/10.1134/S1063774519040126
- ID: 194142
Cite item
Abstract
The possibility of growing arrays of InxGa1 – xAs nanocrystals on GaAs substrates by ion-beam deposition is experimentally shown. The influence of the ion energy, current density, and deposition time of sputtered materials on the height, lateral size, and density of arrays of InxGa1 – xAs nanocrystals is investigated. The possibilities of changing controllably the deposition parameters of InxGa1 – xAs(GaAs) nanocrystals are analyzed. The technological growth parameters of InGaAs nanofilms on GaAs are determined. The composition, structural quality, and photoluminescence of InxGa1 – xAs nanocrystals and films grown on GaAs are studied.
About the authors
M. L. Lunina
Southern Scientific Center, Russian Academy of Sciences
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006
L. S. Lunin
Southern Scientific Center, Russian Academy of Sciences; South-Russian State Technical University
Author for correspondence.
Email: lunin_ls@mail.ru
Russian Federation, Rostov-on-Don, 344006; Novocherkassk, 346400
I. A. Sysoev
North-Caucasus Federal University
Email: lunin_ls@mail.ru
Russian Federation, Stavropol, 355029
D. A. Gusev
North-Caucasus Federal University
Email: lunin_ls@mail.ru
Russian Federation, Stavropol, 355029
A. E. Kazakova
South-Russian State Technical University
Email: lunin_ls@mail.ru
Russian Federation, Novocherkassk, 346400