Ion-Beam Crystallization of InGaAs Island Nanostructures on GaAs Substrates


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

The possibility of growing arrays of InxGa1 – xAs nanocrystals on GaAs substrates by ion-beam deposition is experimentally shown. The influence of the ion energy, current density, and deposition time of sputtered materials on the height, lateral size, and density of arrays of InxGa1 – xAs nanocrystals is investigated. The possibilities of changing controllably the deposition parameters of InxGa1 – xAs(GaAs) nanocrystals are analyzed. The technological growth parameters of InGaAs nanofilms on GaAs are determined. The composition, structural quality, and photoluminescence of InxGa1 – xAs nanocrystals and films grown on GaAs are studied.

Авторлар туралы

M. Lunina

Southern Scientific Center, Russian Academy of Sciences

Email: lunin_ls@mail.ru
Ресей, Rostov-on-Don, 344006

L. Lunin

Southern Scientific Center, Russian Academy of Sciences; South-Russian State Technical University

Хат алмасуға жауапты Автор.
Email: lunin_ls@mail.ru
Ресей, Rostov-on-Don, 344006; Novocherkassk, 346400

I. Sysoev

North-Caucasus Federal University

Email: lunin_ls@mail.ru
Ресей, Stavropol, 355029

D. Gusev

North-Caucasus Federal University

Email: lunin_ls@mail.ru
Ресей, Stavropol, 355029

A. Kazakova

South-Russian State Technical University

Email: lunin_ls@mail.ru
Ресей, Novocherkassk, 346400

Қосымша файлдар

Қосымша файлдар
Әрекет
1. JATS XML

© Pleiades Publishing, Inc., 2019