Ion-Beam Crystallization of InGaAs Island Nanostructures on GaAs Substrates

Abstract

The possibility of growing arrays of In_xGa_1 – xAs nanocrystals on GaAs substrates by ion-beam deposition is experimentally shown. The influence of the ion energy, current density, and deposition time of sputtered materials on the height, lateral size, and density of arrays of In_xGa_1 – xAs nanocrystals is investigated. The possibilities of changing controllably the deposition parameters of In_xGa_1 – xAs(GaAs) nanocrystals are analyzed. The technological growth parameters of InGaAs nanofilms on GaAs are determined. The composition, structural quality, and photoluminescence of In_xGa_1 – xAs nanocrystals and films grown on GaAs are studied.