A Novel Parameter Identification Approach for C–V–T Characteristics of Multi-Quantum Wells Schottky Diode Using Ant Lion Optimizer
- 作者: Filali W.1, Garoudja E.1, Oussalah S.2, Mekheldi M.1, Sengouga N.3, Henini M.4
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隶属关系:
- Plateforme Technologique en Micro-Fabrication, Centre de Développement des Technologies Avancées
- Microelectronics and Nanotechnology Division, Centre de Développement des Technologies Avancées
- Laboratory of Metallic and Semiconducting Materials, Université Mohamed Khider Biskra
- School of Physics and Astronomy, Nottingham Nanotechnology and Nano-Science Center, University of Nottingham
- 期: 卷 48, 编号 6 (2019)
- 页面: 428-434
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/187220
- DOI: https://doi.org/10.1134/S1063739719660028
- ID: 187220
如何引用文章
详细
We report the capacitance-voltage (C–V) characteristics of multi quantum wells Schottky diode. This diode is based on Aluminum gallium arsenide, which is highly promising wide band gap semiconductor for applications in high power electronic and optoelectronic devices. The elaboration process and the characterization phase have been carried out at Nottingham University. The C–V characteristics have been measured at different temperature ranging from 20 to 400 K. The barrier height and effective density were than extracted from 1/(C/A)2 plot using heuristic algorithm which called ALO (Ant Lion Optimizer). The accuracy of the extraction method is verified through the gotten results.
作者简介
W. Filali
Plateforme Technologique en Micro-Fabrication, Centre de Développement des Technologies Avancées
编辑信件的主要联系方式.
Email: wfilali@cdta.dz
阿尔及利亚, cité 20 août 1956, Baba Hassen, Algiers
E. Garoudja
Plateforme Technologique en Micro-Fabrication, Centre de Développement des Technologies Avancées
Email: wfilali@cdta.dz
阿尔及利亚, cité 20 août 1956, Baba Hassen, Algiers
S. Oussalah
Microelectronics and Nanotechnology Division, Centre de Développement des Technologies Avancées
Email: wfilali@cdta.dz
阿尔及利亚, cité 20 août 1956, Baba Hassen, Algiers
M. Mekheldi
Plateforme Technologique en Micro-Fabrication, Centre de Développement des Technologies Avancées
Email: wfilali@cdta.dz
阿尔及利亚, cité 20 août 1956, Baba Hassen, Algiers
N. Sengouga
Laboratory of Metallic and Semiconducting Materials, Université Mohamed Khider Biskra
Email: wfilali@cdta.dz
阿尔及利亚, Biskra RP, B.P 455, 07000
M. Henini
School of Physics and Astronomy, Nottingham Nanotechnology and Nano-Science Center,University of Nottingham
Email: wfilali@cdta.dz
英国, Nottingham, NG7 2RD