A Novel Parameter Identification Approach for C–V–T Characteristics of Multi-Quantum Wells Schottky Diode Using Ant Lion Optimizer
- Авторлар: Filali W.1, Garoudja E.1, Oussalah S.2, Mekheldi M.1, Sengouga N.3, Henini M.4
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Мекемелер:
- Plateforme Technologique en Micro-Fabrication, Centre de Développement des Technologies Avancées
- Microelectronics and Nanotechnology Division, Centre de Développement des Technologies Avancées
- Laboratory of Metallic and Semiconducting Materials, Université Mohamed Khider Biskra
- School of Physics and Astronomy, Nottingham Nanotechnology and Nano-Science Center, University of Nottingham
- Шығарылым: Том 48, № 6 (2019)
- Беттер: 428-434
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/187220
- DOI: https://doi.org/10.1134/S1063739719660028
- ID: 187220
Дәйексөз келтіру
Аннотация
We report the capacitance-voltage (C–V) characteristics of multi quantum wells Schottky diode. This diode is based on Aluminum gallium arsenide, which is highly promising wide band gap semiconductor for applications in high power electronic and optoelectronic devices. The elaboration process and the characterization phase have been carried out at Nottingham University. The C–V characteristics have been measured at different temperature ranging from 20 to 400 K. The barrier height and effective density were than extracted from 1/(C/A)2 plot using heuristic algorithm which called ALO (Ant Lion Optimizer). The accuracy of the extraction method is verified through the gotten results.
Негізгі сөздер
Авторлар туралы
W. Filali
Plateforme Technologique en Micro-Fabrication, Centre de Développement des Technologies Avancées
Хат алмасуға жауапты Автор.
Email: wfilali@cdta.dz
Алжир, cité 20 août 1956, Baba Hassen, Algiers
E. Garoudja
Plateforme Technologique en Micro-Fabrication, Centre de Développement des Technologies Avancées
Email: wfilali@cdta.dz
Алжир, cité 20 août 1956, Baba Hassen, Algiers
S. Oussalah
Microelectronics and Nanotechnology Division, Centre de Développement des Technologies Avancées
Email: wfilali@cdta.dz
Алжир, cité 20 août 1956, Baba Hassen, Algiers
M. Mekheldi
Plateforme Technologique en Micro-Fabrication, Centre de Développement des Technologies Avancées
Email: wfilali@cdta.dz
Алжир, cité 20 août 1956, Baba Hassen, Algiers
N. Sengouga
Laboratory of Metallic and Semiconducting Materials, Université Mohamed Khider Biskra
Email: wfilali@cdta.dz
Алжир, Biskra RP, B.P 455, 07000
M. Henini
School of Physics and Astronomy, Nottingham Nanotechnology and Nano-Science Center,University of Nottingham
Email: wfilali@cdta.dz
Ұлыбритания, Nottingham, NG7 2RD