Parameter Calculation and Investigation of a MIS Varicap with Charge Transfer for L-Range Microwave Devices
- 作者: Surin Y.1, Spiridonov A.2, Litsoev S.1, Martinova V.1, Mezhov A.1, Karpovskaya A.1
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隶属关系:
- AO NIIMP-K
- National Research University of Electronic Technology
- 期: 卷 46, 编号 7 (2017)
- 页面: 484-488
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186654
- DOI: https://doi.org/10.1134/S1063739717070113
- ID: 186654
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详细
The characteristics of a MIS varicap with charge transfer designed for control microwave devices are analyzed. The limiting frequency of the device is shown to be at least twice as high as that of the standard MIS varicap based on a MIS system with a thicker dielectric in the varicap with charge transfer. A method for parameter measurements in the microwave range is developed. Some device samples are fabricated based on thin substrates of monocrystalline silicon with epitaxial layers. The correspondence between the theoretical and experimental characteristics of the varicap is established.
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作者简介
Yu. Surin
AO NIIMP-K
Email: sface@mail.ru
俄罗斯联邦, Moscow
A. Spiridonov
National Research University of Electronic Technology
Email: sface@mail.ru
俄罗斯联邦, Moscow
S. Litsoev
AO NIIMP-K
编辑信件的主要联系方式.
Email: sface@mail.ru
俄罗斯联邦, Moscow
V. Martinova
AO NIIMP-K
Email: sface@mail.ru
俄罗斯联邦, Moscow
A. Mezhov
AO NIIMP-K
Email: sface@mail.ru
俄罗斯联邦, Moscow
A. Karpovskaya
AO NIIMP-K
Email: sface@mail.ru
俄罗斯联邦, Moscow