Parameter Calculation and Investigation of a MIS Varicap with Charge Transfer for L-Range Microwave Devices


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The characteristics of a MIS varicap with charge transfer designed for control microwave devices are analyzed. The limiting frequency of the device is shown to be at least twice as high as that of the standard MIS varicap based on a MIS system with a thicker dielectric in the varicap with charge transfer. A method for parameter measurements in the microwave range is developed. Some device samples are fabricated based on thin substrates of monocrystalline silicon with epitaxial layers. The correspondence between the theoretical and experimental characteristics of the varicap is established.

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Yu. Surin

AO NIIMP-K

Email: sface@mail.ru
俄罗斯联邦, Moscow

A. Spiridonov

National Research University of Electronic Technology

Email: sface@mail.ru
俄罗斯联邦, Moscow

S. Litsoev

AO NIIMP-K

编辑信件的主要联系方式.
Email: sface@mail.ru
俄罗斯联邦, Moscow

V. Martinova

AO NIIMP-K

Email: sface@mail.ru
俄罗斯联邦, Moscow

A. Mezhov

AO NIIMP-K

Email: sface@mail.ru
俄罗斯联邦, Moscow

A. Karpovskaya

AO NIIMP-K

Email: sface@mail.ru
俄罗斯联邦, Moscow


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