Parameter Calculation and Investigation of a MIS Varicap with Charge Transfer for L-Range Microwave Devices
- Авторлар: Surin Y.1, Spiridonov A.2, Litsoev S.1, Martinova V.1, Mezhov A.1, Karpovskaya A.1
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Мекемелер:
- AO NIIMP-K
- National Research University of Electronic Technology
- Шығарылым: Том 46, № 7 (2017)
- Беттер: 484-488
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186654
- DOI: https://doi.org/10.1134/S1063739717070113
- ID: 186654
Дәйексөз келтіру
Аннотация
The characteristics of a MIS varicap with charge transfer designed for control microwave devices are analyzed. The limiting frequency of the device is shown to be at least twice as high as that of the standard MIS varicap based on a MIS system with a thicker dielectric in the varicap with charge transfer. A method for parameter measurements in the microwave range is developed. Some device samples are fabricated based on thin substrates of monocrystalline silicon with epitaxial layers. The correspondence between the theoretical and experimental characteristics of the varicap is established.
Негізгі сөздер
Авторлар туралы
Yu. Surin
AO NIIMP-K
Email: sface@mail.ru
Ресей, Moscow
A. Spiridonov
National Research University of Electronic Technology
Email: sface@mail.ru
Ресей, Moscow
S. Litsoev
AO NIIMP-K
Хат алмасуға жауапты Автор.
Email: sface@mail.ru
Ресей, Moscow
V. Martinova
AO NIIMP-K
Email: sface@mail.ru
Ресей, Moscow
A. Mezhov
AO NIIMP-K
Email: sface@mail.ru
Ресей, Moscow
A. Karpovskaya
AO NIIMP-K
Email: sface@mail.ru
Ресей, Moscow