Electromagnetic Modeling, Technology, and Production of Microwave C 3 MOSHFET Switches on AlGaN/GaN Heterostructures

A. S. Adonin; A. Yu. Evgrafov; V. M. Minnebaev; N. G. Ivashchenko; A. V. Myakon’kikh; A. E. Rogozhin; K. V. Rudenko

doi:10.1134/S1063739717060026

Electromagnetic Modeling, Technology, and Production of Microwave C³MOSHFET Switches on AlGaN/GaN Heterostructures

作者: Adonin A.¹, Evgrafov A.¹, Minnebaev V.¹, Ivashchenko N.¹, Myakon’kikh A.², Rogozhin A.², Rudenko K.²
隶属关系:
1. AO Scientific and Production Enterprise NPP Pulsar
2. Physics and Technological Institute
期: 卷 46, 编号 6 (2017)
页面: 390-395
栏目: Article
URL: https://journals.rcsi.science/1063-7397/article/view/186560
DOI: https://doi.org/10.1134/S1063739717060026
ID: 186560

如何引用文章

全文:

开放存取

##reader.subscriptionAccessGranted##
受限制的访问

订阅存取

详细
作者简介
参考
统计

详细

The features of the electromagnetic modeling of a microwave switch for the frequency range of 1–20 GHz, which is then produced by C³MOSHFET technology on AlGaN/GaN heterostructures using high-K dielectrics and contacts with capacitive coupling, are considered.