Multilayer graphene-based flash memory
- Авторы: Novikov Y.N.1, Gritsenko V.A.1,2, Krasnikov G.Y.3, Orlov O.M.3
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Учреждения:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University, Novosibirsk
- Scientific Research Institute of Molecular Electronics
- Выпуск: Том 45, № 1 (2016)
- Страницы: 63-67
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185499
- DOI: https://doi.org/10.1134/S1063739715060050
- ID: 185499
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Аннотация
For the memory element based on a Si/HfO2/multilayer graphene/SiO2/Si structure, the write/erase and charge storage characteristics are evaluated. A sufficiently large work function of electrons in multilayer graphene (MLG) makes it possible to increase the time of storing the charge injected into it. Using MLG in flash memory devices allows one to increase the speed and/or reduce the voltage of reprogramming such devices.
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Об авторах
Yu. Novikov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Автор, ответственный за переписку.
Email: nov@isp.nsc.ru
Россия, Moscow
V. Gritsenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University, Novosibirsk
Email: nov@isp.nsc.ru
Россия, Moscow; Moscow
G. Krasnikov
Scientific Research Institute of Molecular Electronics
Email: nov@isp.nsc.ru
Россия, Moscow
O. Orlov
Scientific Research Institute of Molecular Electronics
Email: nov@isp.nsc.ru
Россия, Moscow
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