Мақаланы E-mail арқылы жіберу Multilayer graphene-based flash memory
- Авторлар: Novikov Y.1, Gritsenko V.1,2, Krasnikov G.3, Orlov O.3
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Мекемелер:
- Rzhanov Institute of Semiconductor Physics, Siberian Branch
- Novosibirsk State University, Novosibirsk
- Scientific Research Institute of Molecular Electronics
- Шығарылым: Том 45, № 1 (2016)
- Беттер: 63-67
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185499
- DOI: https://doi.org/10.1134/S1063739715060050
- ID: 185499
Дәйексөз келтіру
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Тек жазылушылар үшін
Аннотация
For the memory element based on a Si/HfO2/multilayer graphene/SiO2/Si structure, the write/erase and charge storage characteristics are evaluated. A sufficiently large work function of electrons in multilayer graphene (MLG) makes it possible to increase the time of storing the charge injected into it. Using MLG in flash memory devices allows one to increase the speed and/or reduce the voltage of reprogramming such devices.
Негізгі сөздер
Авторлар туралы
Yu. Novikov
Rzhanov Institute of Semiconductor Physics, Siberian Branch
Хат алмасуға жауапты Автор.
Email: nov@isp.nsc.ru
Ресей, Moscow
V. Gritsenko
Rzhanov Institute of Semiconductor Physics, Siberian Branch; Novosibirsk State University, Novosibirsk
Email: nov@isp.nsc.ru
Ресей, Moscow; Moscow
G. Krasnikov
Scientific Research Institute of Molecular Electronics
Email: nov@isp.nsc.ru
Ресей, Moscow
O. Orlov
Scientific Research Institute of Molecular Electronics
Email: nov@isp.nsc.ru
Ресей, Moscow
