Том 46, № 4 (2017)
- Жылы: 2017
- Мақалалар: 12
- URL: https://journals.rcsi.science/1063-7397/issue/view/11671
Article
Integrated optical-controlled diamond sensors
Аннотация
The review gives an idea about a special class of solid-state high-technology external field sensors based on diamond microstructures with optically active defects. Several types of such devices, including magnetometers, electrometers, and thermometers, are considered, which represent quantum chips containing a sensitive element (diamond structure), control and measurement units (laser, microwave signal source, and detector), and an interface of the interaction between them. The functional characteristics of the sensors determining the sphere of their application are described.
Effect of constructional features of the insulating gap of open TiN–SiO2–W and Si–SiO2–W “sandwich” structures on the process of their electroforming
Аннотация
It is experimentally shown that the introduction of an additional dielectrical layer several nanometers thick (more than 2.5 and 1.3 nm for TiO2 and SiO2, respectively) into open TiN–SiO2–W and Si–SiO2–W “sandwich”-structures on their anode (lower electrode, i.e., TiN and Si, respectively) in series with respect to the conducting medium formed in the insulating gap during electroformation appreciably decreases the probability of an electrical breakdown. This effect is produced by the limitation of the current by the resistance of an additional dielectrical layer at the prebreakdown level. Some experimental dependences of the probability of successfully electroforming on the thickness of an additional dielectrical layer (TiO2) are obtained for the TiN–SiO2–W structure.
Calculating the high-frequency electrical conductivity of a thin semiconductor film for different specular reflection coefficients of its surface
Аннотация
In this paper, using the kinetic method, we calculate the conductivity of a thin semiconductor layer in an alternating electric field taking into account the different specular reflection coefficients of its surfaces. No constraints are imposed on the relation between the free path length of the electrons (holes) and the thickness of the layer. The dependences are analyzed of the modulus and the argument of the dimensionless conductivity on the dimensionless thickness of the layer, the dimensionless frequency of the external electric field, and specular reflection coefficient of one of its surfaces. The results are compared with the theoretical calculations and the experimental data for a metal film.
Copper etching kinetics in a high-frequency discharge of freon R12
Аннотация
Some specific features of the interaction between copper and freon R12 and the effect of the treatment time and external plasma parameters (temperature, bias power, applied power, and gas pressure) on the copper etching rate are experimentally studied. Activation energies (within the studied temperature range) are established to be typical for heterogeneous reactions controlled by adsorption-desorption processes, thus indicating the key role of ion bombardment in activating the desorption of a passivating film. The surface quality of the treated specimens was analyzed by atomic force microscopy.
Effect of the mixture composition on the electrophysical parameters and emission spectra of CF2Cl2/Ar and CF2Cl2/He plasma
Аннотация
The effect of the mixture was analyzed on the electrophysical parameters and emission spectra of CF2Cl2/Ar and CF2Cl2/He plasma. Data on the gas temperature and reduced electric field intensity are obtained. Based on the analysis of the plasma emission spectra, it is suggested that the dilution of CF2Cl2 with argon or helium, even in a 1-to-1 ratio, does not cause significant changes in the concentration of Cl atoms.
Optimization of ohmic contacts to n-GaAs layers of heterobipolar nanoheterostructures
Аннотация
This paper investigates ohmic contacts to n-GaAs layers of the heterobipolar nanoheterostructures obtained through electron-beam evaporation of Ge, Au, Ni, and Au layer-by-layer. The effect of the firing time and temperature on the contact resistance is considered. Based on the analysis of the characteristics of the ohmic contacts, a firing installation of a special design and a firing technique are developed. The technique ensures the minimum contact resistance for the minimum size of a transition layer, satisfactory morphology, and even edges of the contacts.
A technique for the local doping and correction of the conductivity of PbSnTe epitaxial layers via indium diffusion from superficial nanometer-thick films
Аннотация
A technique is described for the local indium doping of epitaxial films of a p-type PbSnTe solid solution to obtain a metal-insulator transition at liquid-helium temperatures. The indium was diffused from the surface of the film, from an In layer several nanometers thick, whereas the shape and size of the doped layer were set by a mask. It is emphasized that the oxide layer should be removed before indium deposition, and that the thickness of the deposited indium layer should be precisely chosen based on the thickness of the PbSnTe film. The results of using this technique for films having different compositions and the results of measurements performed on a planar p-i-p structure are considered.
Diffusion model of the ionization response of LSI elements under exposure to heavy charged particles
Аннотация
An analytical model to evaluate the ionization response of a group of closely located p-n junctions under exposure to a separate heavy charged particle (HCP) in a diffusive approximation is proposed. It is revealed that, taking into account, the inhomogeneous boundary conditions leads to larger values of the collected charge in a separate sensitive area than in estimations in a classical approximation in the case of homogeneous boundary conditions. It is shown that in modern submicron VLSIs it is possible to increase the collected charge through the amplification properties of a parasitic bipolar transistor.