Possibility of Controlling the Impurity Concentration in the Near-Surface Layers of Films Grown by the ALD Method
- Авторлар: Fadeev A.1, Rudenko K.1
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Мекемелер:
- Valiev Institute of Physics and Technology, Russian Academy of Sciences
- Шығарылым: Том 48, № 4 (2019)
- Беттер: 220-228
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/187140
- DOI: https://doi.org/10.1134/S1063739719040048
- ID: 187140
Дәйексөз келтіру
Аннотация
The theory-based mode allowing control of the impurity concentration in the near-surface layers of the films of dielectric oxides grown by the method of atomic layer deposition (ALD) from metalorganic precursors is discussed. It is shown by simulation that, in the near-surface dielectric layer of ~20 monolayers in thickness, the concentration of impurity carbon can be reduce by up to a factor of 5, to the level of values of the per-unit-volume concentration of this impurity. We propose carrying out the growth processes of films with the modification of the parameters of the ALD cycle that should lead to an improvement of the dielectric parameters on the interfaces of multilayered structures.
Авторлар туралы
A. Fadeev
Valiev Institute of Physics and Technology, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: AlexVFadeev@gmail.com
Ресей, Moscow, 117218
K. Rudenko
Valiev Institute of Physics and Technology, Russian Academy of Sciences
Хат алмасуға жауапты Автор.
Email: rudenko@ftian.ru
Ресей, Moscow, 117218