Laser Method of Evaluating Parameters of LSI Sensitivity to the Impact of Single Ions
- Авторлар: Chumakov A.1
-
Мекемелер:
- National Research Nuclear University MEPhI
- Шығарылым: Том 47, № 3 (2018)
- Беттер: 175-180
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186821
- DOI: https://doi.org/10.1134/S1063739718030058
- ID: 186821
Дәйексөз келтіру
Аннотация
The experimental-calculated methodology for evaluating the LSI sensitivity to the impact of single charged particles based on using laser radiation is proposed. The sensitivity of VLSI is determined by the results of scanning with the laser radiation of picosecond duration of the entire chip surface. The optical loss at the same points are evaluated by the measurement results of the ionization current under exposure to steady-state laser radiation.
Авторлар туралы
A. Chumakov
National Research Nuclear University MEPhI
Хат алмасуға жауапты Автор.
Email: Aichum@spels.ru
Ресей, Moscow, 115409