Simulation of characteristics and optimization of the constructive and technological parameters of integrated magnetosensitive elements in micro and nanosystems
- Авторлар: Kozlov A.1, Krasjukov A.1, Krupkina T.1, Chaplygin Y.1
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Мекемелер:
- National Research University of Electronic Technology
- Шығарылым: Том 45, № 7 (2016)
- Беттер: 522-527
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185995
- DOI: https://doi.org/10.1134/S1063739716070088
- ID: 185995
Дәйексөз келтіру
Аннотация
The features of the technology computer aided design of integrated magnetosensitive elements in micro and nanosystems are considered. The results of the simulation and optimization of the constructive and technological parameters for magnetosensitive transistors, integrated Hall elements based on the standard CMOS technology, the Hall field sensor based on SOI-structures, and the characteristics of magnetic field concentrators are presented.
Авторлар туралы
A. Kozlov
National Research University of Electronic Technology
Email: Krupkina@dsd.miee.ru
Ресей, Moscow, 124498
A. Krasjukov
National Research University of Electronic Technology
Email: Krupkina@dsd.miee.ru
Ресей, Moscow, 124498
T. Krupkina
National Research University of Electronic Technology
Хат алмасуға жауапты Автор.
Email: Krupkina@dsd.miee.ru
Ресей, Moscow, 124498
Yu. Chaplygin
National Research University of Electronic Technology
Email: Krupkina@dsd.miee.ru
Ресей, Moscow, 124498