Simulation of characteristics and optimization of the constructive and technological parameters of integrated magnetosensitive elements in micro and nanosystems
- 作者: Kozlov A.1, Krasjukov A.1, Krupkina T.1, Chaplygin Y.1
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隶属关系:
- National Research University of Electronic Technology
- 期: 卷 45, 编号 7 (2016)
- 页面: 522-527
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185995
- DOI: https://doi.org/10.1134/S1063739716070088
- ID: 185995
如何引用文章
详细
The features of the technology computer aided design of integrated magnetosensitive elements in micro and nanosystems are considered. The results of the simulation and optimization of the constructive and technological parameters for magnetosensitive transistors, integrated Hall elements based on the standard CMOS technology, the Hall field sensor based on SOI-structures, and the characteristics of magnetic field concentrators are presented.
作者简介
A. Kozlov
National Research University of Electronic Technology
Email: Krupkina@dsd.miee.ru
俄罗斯联邦, Moscow, 124498
A. Krasjukov
National Research University of Electronic Technology
Email: Krupkina@dsd.miee.ru
俄罗斯联邦, Moscow, 124498
T. Krupkina
National Research University of Electronic Technology
编辑信件的主要联系方式.
Email: Krupkina@dsd.miee.ru
俄罗斯联邦, Moscow, 124498
Yu. Chaplygin
National Research University of Electronic Technology
Email: Krupkina@dsd.miee.ru
俄罗斯联邦, Moscow, 124498