Russian Microelectronics
ISSN 1063-7397 (Print)
ISSN 1608-3415 (Online)
Menu
Archives
Home
About the Journal
Editorial Team
Editorial Policies
Author Guidelines
About the Journal
Issues
Search
Current
Retracted articles
Archives
Contact
All Journals
Reference materials
Instructions for using the platform
Instructions for signing an agreement for RAS journals
User
Username
Password
Remember me
Forgot password?
Register
Notifications
View
Subscribe
Search
Search
Search Scope
All
Authors
Title
Abstract
Index terms
Full Text
Browse
By Issue
By Author
By Title
By Sections
Other Journals
Subscription
Login to verify subscription
Keywords
ADC
DAC
GaAs
MIS varicap
RUSSIAN Microelectronics
atomic force microscopy
compaction in a magnetic field
ferroelectrics
gallium arsenide
gallium nitride
heterostructure
heterostructures
interface
leakage current
magnetic texture
phase shifter
porous silicon
recrystallization
silicon carbide
varicap
zirconia
×
User
Username
Password
Remember me
Forgot password?
Register
Notifications
View
Subscribe
Search
Search
Search Scope
All
Authors
Title
Abstract
Index terms
Full Text
Browse
By Issue
By Author
By Title
By Sections
Other Journals
Subscription
Login to verify subscription
Keywords
ADC
DAC
GaAs
MIS varicap
RUSSIAN Microelectronics
atomic force microscopy
compaction in a magnetic field
ferroelectrics
gallium arsenide
gallium nitride
heterostructure
heterostructures
interface
leakage current
magnetic texture
phase shifter
porous silicon
recrystallization
silicon carbide
varicap
zirconia
Home
>
Search
>
Author Details
Author Details
Shvetsov-Shilovskii, I. I.
Issue
Section
Title
File
Vol 48, No 4 (2019)
Article
Inter-Device Radiation-Induced Leakages in the Bulk 180-nm CMOS Technology
TOP
