Inter-Device Radiation-Induced Leakages in the Bulk 180-nm CMOS Technology

Аннотация

This article deals with a study of radiation-induced leakages between n-regions of various types using test structures fabricated according to the 0.18-µm CMOS technology. It is shown that, depending on the radiation exposure dose, the leakages between the n⁺-regions and the n-well may exceed the leakages between the n⁺-regions by 3–9 times, which should be taken into consideration when developing radiation resistant VSHICs.