Mechanisms of Initiation of Unstable Latchup Effects in CMOS ICs


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Аннотация

The results of research on nonstationary latchup effects (LEs) under the influence of heavy charged particles and ionizing radiation pulses, which are spontaneously counteracted depending on the operating conditions, are presented. This behavior is caused by the effects of the rail span collapse inside the complementary metal-oxide-system (CMOS) of very large scale integrated (VLSI) circuits. The experimental studies are carried out on both the ion accelerator and the laser facilities.

Авторлар туралы

A. Chumakov

National Research Nuclear University MEPhI, Joint Stock Company
“Experimental Research and Production Association Special Electronic System” (JSC “ENGOs SPELS”)

Хат алмасуға жауапты Автор.
Email: aichum@spels.ru
Ресей, Moscow, 115409

D. Bobrovsky

National Research Nuclear University MEPhI, Joint Stock Company
“Experimental Research and Production Association Special Electronic System” (JSC “ENGOs SPELS”)

Email: aichum@spels.ru
Ресей, Moscow, 115409

A. Pechenkin

National Research Nuclear University MEPhI, Joint Stock Company
“Experimental Research and Production Association Special Electronic System” (JSC “ENGOs SPELS”)

Email: aichum@spels.ru
Ресей, Moscow, 115409

D. Savchenkov

National Research Nuclear University MEPhI, Joint Stock Company
“Experimental Research and Production Association Special Electronic System” (JSC “ENGOs SPELS”)

Email: aichum@spels.ru
Ресей, Moscow, 115409

G. Sorokoumov

National Research Nuclear University MEPhI, Joint Stock Company
“Experimental Research and Production Association Special Electronic System” (JSC “ENGOs SPELS”)

Email: aichum@spels.ru
Ресей, Moscow, 115409

I. Shvetsov-Shilovskiy

National Research Nuclear University MEPhI, Joint Stock Company
“Experimental Research and Production Association Special Electronic System” (JSC “ENGOs SPELS”)

Email: aichum@spels.ru
Ресей, Moscow, 115409

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