Calculation of the Influence of Shunt Parameters on the dV/dt Effect in Power Photothyristors


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The influence of the topological parameters of shunts in the cathode regions of a photothyristor on the dV/dt effect is calculated. The analytical condition that makes it possible to determine, in the first approximation, the region of the onset of the structure triggering caused by the dV/dt effect is obtained. When the forward voltage increases on the thyristor structure in the off state, the bias current flowing through the barrier capacitance of the inversely biased p-base-n-base junction causes a spontaneous triggering of the structure. This is the core of the dV/dt effect in thyristors.

Sobre autores

D. Silkin

Ogarev National Research Mordova State University

Autor responsável pela correspondência
Email: d-s.silkin@mail.ru
Rússia, Saransk

V. Paderov

Ogarev National Research Mordova State University

Email: d-s.silkin@mail.ru
Rússia, Saransk

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