Dependence of the Resistance of the Negative e-Beam Resist HSQ Versus the Dose in the RIE and Wet Etching Processes
- 作者: Miakonkikh A.1, Orlikovskiy N.2, Rogozhin A.1, Tatarintsev A.1, Rudenko K.1
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隶属关系:
- Institute of Physics and Technology
- Bauman Moscow State Technical University
- 期: 卷 47, 编号 3 (2018)
- 页面: 157-164
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186817
- DOI: https://doi.org/10.1134/S1063739718030101
- ID: 186817
如何引用文章
详细
This article studied the resistance of the negative electron resist based on hydrogen-silsesquioxane (HSQ) depending on the dose of exposure in the process of Reactive Ion Etching (RIE). These studies showed the strong dependence of resistance on irradiation dose (in case of full development of the e-beam resist) even after annealing the resist 30 minutes 400°C in air. Selectivity up to 14 was obtained in the process of reactive ion etching of silicon in a mixture of gases SF6: C4F8. These results can be used to manufacturing of silicon nanoscale structures. It was shown that the resistance to wet etching in a 5% solution of hydrofluoric acid (HF) is also determined by irradiation dose. Additionally, taking into account the obtained results, silicon nanowires of width 10 nm with an aspect ratio of 1: 10 was manufactured.
作者简介
A. Miakonkikh
Institute of Physics and Technology
Email: tatarintsev@ftian.ru
俄罗斯联邦, Moscow, 117218
N. Orlikovskiy
Bauman Moscow State Technical University
Email: tatarintsev@ftian.ru
俄罗斯联邦, Moscow, 114115
A. Rogozhin
Institute of Physics and Technology
Email: tatarintsev@ftian.ru
俄罗斯联邦, Moscow, 117218
A. Tatarintsev
Institute of Physics and Technology
编辑信件的主要联系方式.
Email: tatarintsev@ftian.ru
俄罗斯联邦, Moscow, 117218
K. Rudenko
Institute of Physics and Technology
Email: tatarintsev@ftian.ru
俄罗斯联邦, Moscow, 117218