Frequency Characteristics of GaN Field-Effect Transistors with Traps in the Barrier Layer
- Авторы: Aleshin A.1, Zenchenko N.1, Ponomarev D.1, Ruban O.1
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Учреждения:
- Institute of Ultra-High Frequency Semiconductor Electronics
- Выпуск: Том 47, № 2 (2018)
- Страницы: 137-141
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186809
- DOI: https://doi.org/10.1134/S1063739718020038
- ID: 186809
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Аннотация
This paper presents a modified nonlinear model of the Fujii transistor that incorporates the gate capacitance values obtained by capacitance-voltage measurements. It is shown that the proposed model allows us to correctly determine the operating frequency of the transistor, taking into account the effect of charged dislocation lines in the barrier layer of the heterostructure. The operating frequency values obtained with this modified model are in good agreement with the measured values.
Об авторах
A. Aleshin
Institute of Ultra-High Frequency Semiconductor Electronics
Автор, ответственный за переписку.
Email: myx.05@mail.ru
Россия, Moscow
N. Zenchenko
Institute of Ultra-High Frequency Semiconductor Electronics
Email: myx.05@mail.ru
Россия, Moscow
D. Ponomarev
Institute of Ultra-High Frequency Semiconductor Electronics
Email: myx.05@mail.ru
Россия, Moscow
O. Ruban
Institute of Ultra-High Frequency Semiconductor Electronics
Email: myx.05@mail.ru
Россия, Moscow