The Use of Finite Element Modeling for Calculating the C-V Curve of Capacitor Mems Microphone
- 作者: Grigor’ev D.1, Godovitsyn I.1, Amelichev V.1, Generalov S.1, Polomoshnov S.1
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隶属关系:
- Scientific-Manufacturing Complex Technological Center MIET
- 期: 卷 46, 编号 6 (2017)
- 页面: 396-403
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186564
- DOI: https://doi.org/10.1134/S1063739717060075
- ID: 186564
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详细
The C-V curve is an important characteristic of a MEMS microphone as it determines its operating voltage and sensitivity. Due to the complicated geometry of its fixed perforated backplate and thin movable diaphragm, it requires finite element modeling to calculate the C-V curve. Various methods to solve this problem are considered in this work, and implementation of the iterative calculation method using the ANSYS software package is proposed. The results obtained using the iterative method and the two calculating methods of electrostatic interaction built into the ANSYS software are compared and analyzed.
作者简介
D. Grigor’ev
Scientific-Manufacturing Complex Technological Center MIET
编辑信件的主要联系方式.
Email: D.Grigorev@tcen.ru
俄罗斯联邦, Moscow, 124498
I. Godovitsyn
Scientific-Manufacturing Complex Technological Center MIET
Email: D.Grigorev@tcen.ru
俄罗斯联邦, Moscow, 124498
V. Amelichev
Scientific-Manufacturing Complex Technological Center MIET
Email: D.Grigorev@tcen.ru
俄罗斯联邦, Moscow, 124498
S. Generalov
Scientific-Manufacturing Complex Technological Center MIET
Email: D.Grigorev@tcen.ru
俄罗斯联邦, Moscow, 124498
S. Polomoshnov
Scientific-Manufacturing Complex Technological Center MIET
Email: D.Grigorev@tcen.ru
俄罗斯联邦, Moscow, 124498