Мақаланы E-mail арқылы жіберу Modeling SiO2 leakage currents caused by electrical overloads
- Авторлар: Polunin V.A.1,2
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Мекемелер:
- National Research Nuclear University MEPhI
- AO Experimental Research and Production Association of Specialized Electronic Systems
- Шығарылым: Том 46, № 5 (2017)
- Беттер: 359-364
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186536
- DOI: https://doi.org/10.1134/S1063739717050080
- ID: 186536
Дәйексөз келтіру
Ашық рұқсат
Рұқсат берілді
Тек жазылушылар үшін
Аннотация
A two-component model for the formation of leakage currents in SiO2 in a strong electric field is proposed. In the model, agreement is found between the theoretical and experimental values of leakage currents in a wide range of electric field strength and the size of charge transferred.
Авторлар туралы
V. Polunin
National Research Nuclear University MEPhI; AO Experimental Research and Production Association of Specialized Electronic Systems
Хат алмасуға жауапты Автор.
Email: vapln@spels.ru
Ресей, Moscow, 115409; Moscow, 115409
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