Nonalloyed ohmic contacts for high-electron-mobility transistors based on AlGaN/GaN heterostructures
- Авторы: Pavlov A.1, Pavlov V.1, Slapovskiy D.1, Arutyunyan S.1, Fedorov Y.1, Mal’tsev P.1
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Учреждения:
- Institute of Microwave Semiconductor Electronics
- Выпуск: Том 46, № 5 (2017)
- Страницы: 316-322
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186500
- DOI: https://doi.org/10.1134/S1063739717050079
- ID: 186500
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Аннотация
A microwave field-effect transistor with nonalloyed ohmic contacts is fabricated using the technique of regrowing a heavily doped region under the contact metallization by molecular beam epitaxy through a preliminarily formed dielectric mask. The fabricated field-effect transistor with a gate length of 0.18 µm and a total width of 100 µm has a current–amplification cutoff frequency of 66 GHz and ohmic contact resistivity of 0.15-0.18 Ω mm.
Об авторах
A. Pavlov
Institute of Microwave Semiconductor Electronics
Автор, ответственный за переписку.
Email: vl-pavlov@mail.ru
Россия, Moscow, 117105
V. Pavlov
Institute of Microwave Semiconductor Electronics
Email: vl-pavlov@mail.ru
Россия, Moscow, 117105
D. Slapovskiy
Institute of Microwave Semiconductor Electronics
Email: vl-pavlov@mail.ru
Россия, Moscow, 117105
S. Arutyunyan
Institute of Microwave Semiconductor Electronics
Email: vl-pavlov@mail.ru
Россия, Moscow, 117105
Yu. Fedorov
Institute of Microwave Semiconductor Electronics
Email: vl-pavlov@mail.ru
Россия, Moscow, 117105
P. Mal’tsev
Institute of Microwave Semiconductor Electronics
Email: vl-pavlov@mail.ru
Россия, Moscow, 117105