Element base of quantum informatics I. Qubits of a quantum computer based on single atoms in optical traps
- 作者: Ryabtsev I.1,2, Beterov I.1,2, Yakshina E.1,2, Tretyakov D.1,2, Entin V.1,2, Neizvestny I.1,2, Latyshev A.1,2, Aseev A.1,2
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隶属关系:
- Rzhanov Institute of Semiconductor Physics
- Novosibirsk State University
- 期: 卷 46, 编号 2 (2017)
- 页面: 109-120
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/186269
- DOI: https://doi.org/10.1134/S1063739717020081
- ID: 186269
如何引用文章
详细
A brief overview of the current state of the experimental research on the development of the element base of quantum computers with qubits based on single neutral atoms trapped in optical traps. The requirements for qubits, peculiarities of single neutral atoms as qubits, methods for the quantum register development and for the implementation of single-qubit quantum logic operations in the laser and microwave fields, and two-qubit operations through the dipole–dipole interaction after a short laser excitation of atoms to the Rydberg states are discussed. The results of the experiments on the observation of the interaction of two Rydberg atoms at a Förster resonance controlled by the dc and radio-frequency electric field are presented.
作者简介
I. Ryabtsev
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
编辑信件的主要联系方式.
Email: ryabtsev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
I. Beterov
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: ryabtsev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
E. Yakshina
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: ryabtsev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
D. Tretyakov
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: ryabtsev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
V. Entin
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: ryabtsev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
I. Neizvestny
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: ryabtsev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
A. Latyshev
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: ryabtsev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090
A. Aseev
Rzhanov Institute of Semiconductor Physics; Novosibirsk State University
Email: ryabtsev@isp.nsc.ru
俄罗斯联邦, Novosibirsk, 630090; Novosibirsk, 630090