A method for calculating the thermal characteristics of silicon TVS-diodes in the pulse mode
- 作者: Grigoriev F.1, Aleksandrova A.1, Gafurov V.2
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隶属关系:
- Moscow Institute of Electronics and Mathematics
- Dukhov All-Russian Research Institute of Automatics
- 期: 卷 45, 编号 7 (2016)
- 页面: 469-473
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185879
- DOI: https://doi.org/10.1134/S1063739716070064
- ID: 185879
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详细
The dependence of the thermal characteristics of TVS-diodes during the passage of the pulse overload has been studied. The time dependences of the pulse voltage limitation and current are analyzed. Based on the analysis of the dependences, the thermal characteristics of the TVS-diode are calculated. It is shown that the parameters of the TVS-diodes deteriorate on reaching a current density of 160–300 A/cm2 and critical temperature of 250–300°С. The dependences of the thermal resistance and critical temperature of the TVS-diodes on the current density and the pulse duration are presented.
作者简介
F. Grigoriev
Moscow Institute of Electronics and Mathematics
Email: frog_x@mail.ru
俄罗斯联邦, Moscow, 115054
A. Aleksandrova
Moscow Institute of Electronics and Mathematics
编辑信件的主要联系方式.
Email: frog_x@mail.ru
俄罗斯联邦, Moscow, 115054
V. Gafurov
Dukhov All-Russian Research Institute of Automatics
Email: frog_x@mail.ru
俄罗斯联邦, Moscow, 101000