Kinetics of the interaction between a CCl2F2 radio-frequency discharge and gallium arsenide
- Авторы: Pivovarenok S.1, Dunaev A.1, Murin D.1
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Учреждения:
- Research Institute of Thermodynamics and Kinetics of Chemical Processes
- Выпуск: Том 45, № 5 (2016)
- Страницы: 345-349
- Раздел: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185757
- DOI: https://doi.org/10.1134/S1063739716040089
- ID: 185757
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Аннотация
Halogen-containing plasma, particularly, freons, is often used to form topologies on the surface of semiconductors. This paper investigates the kinetics of the interaction between the R-12 freon and the surface of a semiconductor structure. The R-12 freon is effective for etching semiconductors, particularly, gallium arsenide, as it provides sufficient rates of interaction while preserving a uniform and clean surface. In this work, the surface of the samples is inspected with a Solver P47Pro atomic-force microscope.
Об авторах
S. Pivovarenok
Research Institute of Thermodynamics and Kinetics of Chemical Processes
Автор, ответственный за переписку.
Email: sap@isuct.ru
Россия, Ivanovo, 153000
A. Dunaev
Research Institute of Thermodynamics and Kinetics of Chemical Processes
Email: sap@isuct.ru
Россия, Ivanovo, 153000
D. Murin
Research Institute of Thermodynamics and Kinetics of Chemical Processes
Email: sap@isuct.ru
Россия, Ivanovo, 153000