A method for registration of multiple cell upsets in high capacity memory cells induced by single nuclear particles


Дәйексөз келтіру

Толық мәтін

Ашық рұқсат Ашық рұқсат
Рұқсат жабық Рұқсат берілді
Рұқсат жабық Тек жазылушылар үшін

Аннотация

This study is devoted to the development of a method for the registration of multiple-cell upsets (MCUs) in memory cells induced by single nuclear particles. The presented results illustrate the possibility of finding MCUs in high capacity (higher than 1 Mbit) memory cells using the improved method.

Авторлар туралы

A. Boruzdina

National Research Nuclear University (Moscow Engineering Physics Institute); JSC Experimental Research and Production Association of Specialized Electronic Systems (JSC ENPO SPELS)

Хат алмасуға жауапты Автор.
Email: abbor@spels.ru
Ресей, Kashirskoe sh. 31, Moscow, 115409; Kashirskoye sh. 31, Moscow, 115409

A. Ulanova

National Research Nuclear University (Moscow Engineering Physics Institute); JSC Experimental Research and Production Association of Specialized Electronic Systems (JSC ENPO SPELS)

Email: abbor@spels.ru
Ресей, Kashirskoe sh. 31, Moscow, 115409; Kashirskoye sh. 31, Moscow, 115409

A. Chumakov

National Research Nuclear University (Moscow Engineering Physics Institute); JSC Experimental Research and Production Association of Specialized Electronic Systems (JSC ENPO SPELS)

Email: abbor@spels.ru
Ресей, Kashirskoe sh. 31, Moscow, 115409; Kashirskoye sh. 31, Moscow, 115409

A. Yanenko

National Research Nuclear University (Moscow Engineering Physics Institute); JSC Experimental Research and Production Association of Specialized Electronic Systems (JSC ENPO SPELS)

Email: abbor@spels.ru
Ресей, Kashirskoe sh. 31, Moscow, 115409; Kashirskoye sh. 31, Moscow, 115409


© Pleiades Publishing, Ltd., 2016

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