Photoelectric and optical properties of Schottky-barrier photodiodes based on IrSi–Si
- Авторлар: Kerimov E.1
-
Мекемелер:
- Institute for Space Research of Natural Resources
- Шығарылым: Том 45, № 2 (2016)
- Беттер: 112-118
- Бөлім: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185568
- DOI: https://doi.org/10.1134/S1063739716020062
- ID: 185568
Дәйексөз келтіру
Аннотация
The basic properties in the Schottky-barrier photodiodes (SBPDs) can be reduced to photon absorption in the silicide layer and internal photoemission of charge carriers from a metal to a semiconductor. Therefore, the quantum efficiency and photoresponse of these photodiodes (PDs) are primarily determined by electronic and optical processes in the metal silicide rather than in the semiconductor. This implies that, to a first approximation, the SBPD photoresponse is independent of semiconductor parameters such as the doping level, degree of compensation of impurities, and minority-carrier lifetime. The main reasons for photoresponse nonuniformity in multielement detector arrays are thereby ruled out.
Авторлар туралы
E. Kerimov
Institute for Space Research of Natural Resources
Хат алмасуға жауапты Автор.
Email: E_Kerimov.fizik@mail.ru
Әзірбайжан, Baku