Photoelectric and optical properties of Schottky-barrier photodiodes based on IrSi–Si
- 作者: Kerimov E.1
-
隶属关系:
- Institute for Space Research of Natural Resources
- 期: 卷 45, 编号 2 (2016)
- 页面: 112-118
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185568
- DOI: https://doi.org/10.1134/S1063739716020062
- ID: 185568
如何引用文章
详细
The basic properties in the Schottky-barrier photodiodes (SBPDs) can be reduced to photon absorption in the silicide layer and internal photoemission of charge carriers from a metal to a semiconductor. Therefore, the quantum efficiency and photoresponse of these photodiodes (PDs) are primarily determined by electronic and optical processes in the metal silicide rather than in the semiconductor. This implies that, to a first approximation, the SBPD photoresponse is independent of semiconductor parameters such as the doping level, degree of compensation of impurities, and minority-carrier lifetime. The main reasons for photoresponse nonuniformity in multielement detector arrays are thereby ruled out.
作者简介
E. Kerimov
Institute for Space Research of Natural Resources
编辑信件的主要联系方式.
Email: E_Kerimov.fizik@mail.ru
阿塞拜疆, Baku