System-on-chip: Specifics of radiation behavior and estimation of radiation hardness
- 作者: Kalashnikov O.1, Nekrasov P.1, Nikiforov A.1, Telets V.1, Chukov G.1, Elesin V.1
-
隶属关系:
- National Research Nuclear University MEPhI, ENPO SPELS
- 期: 卷 45, 编号 1 (2016)
- 页面: 33-40
- 栏目: Article
- URL: https://journals.rcsi.science/1063-7397/article/view/185518
- DOI: https://doi.org/10.1134/S1063739716010066
- ID: 185518
如何引用文章
详细
The analysis results of typical radiation faults of the system-on-chip have been presented. The specifics of digital, analog-to-digital (mixed), and microwave system-on-chip are considered. A set of the basic parameters-criteria for the radiation hardness of system-on-chip of various classes is determined. Methodical and technical designs for controlling the operability of the System-on-chip by carrying out radiation tests are proposed.
作者简介
O. Kalashnikov
National Research Nuclear University MEPhI, ENPO SPELS
编辑信件的主要联系方式.
Email: oakal@spels.ru
俄罗斯联邦, Moscow
P. Nekrasov
National Research Nuclear University MEPhI, ENPO SPELS
Email: oakal@spels.ru
俄罗斯联邦, Moscow
A. Nikiforov
National Research Nuclear University MEPhI, ENPO SPELS
Email: oakal@spels.ru
俄罗斯联邦, Moscow
V. Telets
National Research Nuclear University MEPhI, ENPO SPELS
Email: oakal@spels.ru
俄罗斯联邦, Moscow
G. Chukov
National Research Nuclear University MEPhI, ENPO SPELS
Email: oakal@spels.ru
俄罗斯联邦, Moscow
V. Elesin
National Research Nuclear University MEPhI, ENPO SPELS
Email: oakal@spels.ru
俄罗斯联邦, Moscow