Molecular Dynamic Simulation of Silicon Irradiation with 2–8 keV Buckminsterfullerene C60 Ions

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The processes taking place on the (100)Si surface irradiated by 2–8 keV buckminsterfullerene C60 ions at temperatures ranging from 0 to 700 K are examined using molecular dynamics computer simulations. Tersoff-ZBL and Airebo potentials are used to describe pairwise interactions, inelastic energy loss is taken into account for fast atoms. The results show that crystal temperature has no influence on the collision cascade development, but affect its thermalisation and crater formation on the surface. With the C60 ion energy increase, carbon atoms penetrate deeper into the target, both crater volume and size of the rim around it enlarges. Temperature increase to 700 K leads to more effective crater and rim formation comparing to 0 and 300 K cases. We propose possible explanation of the revealed phenomenon.

作者简介

K. Karasev

Academic university named after Alferov

编辑信件的主要联系方式.
Email: kir.karasyov2017@yandex.ru
Russia, 195251, Saint-Petersburg

D. Strizhkin

Polytechnic university named after Peter the Great

Email: platon.karaseov@spbstu.ru
Russia, 195251, Saint-Petersburg

A. Titov

Polytechnic university named after Peter the Great

Email: platon.karaseov@spbstu.ru
Russia, 195251, Saint-Petersburg

P. Karaseov

Polytechnic university named after Peter the Great

编辑信件的主要联系方式.
Email: platon.karaseov@spbstu.ru
Russia, 195251, Saint-Petersburg

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版权所有 © К.П. Карасев, Д.А. Стрижкин, А.И. Титов, П.А. Карасев, 2023

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