Molecular Dynamic Simulation of Silicon Irradiation with 2–8 keV Buckminsterfullerene C 60  Ions

K. P. Karasev; Карасев К. П.; D. A. Strizhkin; Стрижкин Д. А.; A. I. Titov; Титов А. И.; P. A. Karaseov; Карасев П. А.

doi:10.31857/S1028096023010107

Molecular Dynamic Simulation of Silicon Irradiation with 2–8 keV Buckminsterfullerene C₆₀ Ions

Autores: Karasev K.¹, Strizhkin D.², Titov A.², Karaseov P.²
Afiliações:
1. Academic university named after Alferov
2. Polytechnic university named after Peter the Great
Edição: Nº 1 (2023)
Páginas: 74-79
Seção: Articles
URL: https://journals.rcsi.science/1028-0960/article/view/137662
DOI: https://doi.org/10.31857/S1028096023010107
EDN: https://elibrary.ru/BLCQCB
ID: 137662

Citar

Texto integral

Acesso aberto
Acesso é fechado

Acesso está concedido
Acesso é fechado

Somente assinantes

Resumo
Sobre autores
Bibliografia
Arquivos suplementares
Estatísticas

Resumo

The processes taking place on the (100)Si surface irradiated by 2–8 keV buckminsterfullerene C₆₀ ions at temperatures ranging from 0 to 700 K are examined using molecular dynamics computer simulations. Tersoff-ZBL and Airebo potentials are used to describe pairwise interactions, inelastic energy loss is taken into account for fast atoms. The results show that crystal temperature has no influence on the collision cascade development, but affect its thermalisation and crater formation on the surface. With the C₆₀ ion energy increase, carbon atoms penetrate deeper into the target, both crater volume and size of the rim around it enlarges. Temperature increase to 700 K leads to more effective crater and rim formation comparing to 0 and 300 K cases. We propose possible explanation of the revealed phenomenon.

Palavras-chave

Buckminsterfullerene, MD simulations, ion bombardment, radiation damage, surface effects, silicon, temperature.

Bibliografia

Zhang J., Terrones M., Park C.R., Mukherjee R, Monthioux M., Koratkar N., Kim Y. S., Hurt R., Frackowiak E., Enoki T., Chen Y., Chen Y., Bianco A. // Carbon Science in 2016: Status, Challenges and Perspectives Carbon. 2016. V. 98. P. 708. https://doi.org/10.1016/j.carbon.2015.11.060
Бочвар Д.А., Гальперн Э.Г. // Доклады Академии Наук СССР. 1973. Т. 209. С. 610.
Robertson J. // Mater. Sci. Eng. Res. 2002. V. 37. P. 129. https://doi.org/10.1016/S0927-796X(02)00005-0
Khadem M., Pukha V.E., Penkov O.V. et al. // Surf. Coat. Technol. 2021. V. 424. P. 127670. https://doi.org/10.1016/j.surfcoat.2021.127670
Pukha V.E., Pugachov A.T., Churakova N.P., Zubarev E.N., Vinogradov V.E., Nam S.C. // J. Nanosci. Nanotechnol. 2012. V. 12. № 6. P. 4762. https://doi.org/10.1166/jnn.2012.4925
Penkov O.V., Pukha V.E., Starikova S.L., Khadem M., Starikov V.V., Maleev M.V., Kim D.E. // Biomaterials. 2016. V. 102. P. 130. https://doi.org/10.1016/j.biomaterials.2016.06.029
Аброян И.А., Андронов А.Н., Титов А.И. Физические основы электронной и ионной технологии. М.: Высшая школа, 1984. 135 с.
Postawa Z., Czerwinski B., Szewczyk M., Smiley E.J., Winograd N., Garrison B.J. // Anal. Chem. 2003. V. 75. P. 4402. https://doi.org/10.1021/ac034387a
Delcorte A., Garrison B.J. // J. Phys. Chem. 2007. V. 111. P. 15312. https://doi.org/10.1021/jp074536j
Krantzman K.D., Kingsbury D.B., Garrison B.J. // Appl. Surf. Sci. 2006. V. 252. P. 6463. https://doi.org/10.1016/j.apsusc.2006.02.276
Krantzman K.D., Garrison B.J. // Surf. Interface Anal. 2011. V. 43. P. 123. https://doi.org/10.1002/sia.3438
Krantzman K.D., Wucher A. // J. Phys. Chem. C. 2010. V. 114. № 12. P. 5480.https://doi.org/10.1021/jp906050f
Малеев М.В., Зубарев Е.Н., Пуха В.Е., Дроздов А.Н., Вус А.С., Девизенко А.Ю. // ФИП. 2015. Т. 13. С. 91. https://doi.org/10.15407/mfint.37.06.0775
Pukha V., Popova J., Khadem M., Dae-Eun Kim, Khodos I., Shakhmin A., Mishin M., Krainov K., Titov A., Karaseov P. // Formation of Functional Conductive Carbon Coating on Si by C60 Ion Beam. In: International Youth Conference on Electronics, Telecommunications and Information Technologies. Springer Proceedings in Physics. 2020. V. 255 / Ed. Velichko E. et al., Springer, Cham. https://doi.org/10.1007/978-3-030-58868-7_15
Pukha V., Belmesov A., Glukhov A., Khodos I., Khadem M., Kim D.-E., Krainov K., Shakhmin A., Karaseov P. // Features of the Conductive Carbon Coatings Formation on Titanium Electrodes Using C60 Ion Beams. In: International Youth Conference on Electronics, Telecommunications and Information Technologies. Springer Proceedings in Physics. 2022. V. 268 / Ed. Velichko E., Kapralova V., Karaseov P., et al., Springer, Cham. https://doi.org/10.1007/978-3-030-81119-8_41
Thompson A.P., Aktulga H.M., Berger R. et al. // Comp. Phys. Comm. 2022. V. 271. P. 10817. https://doi.org/10.1016/j.cpc.2021.108171
Stuart S.J., Tutein A.B., Harrison J.A. // J. Chem. Phys. 2000. V. 112. P. 6472. https://doi.org/10.1063/1.481208
Tersoff J. // Phys. Rev. B. 1988. V. 37. P. 6991. https://doi.org/10.1103/PhysRevB.37.6991
Ziegler J.F., Biersack J.P. // The Stopping and Range of Ions in Matter. In: Treatise on Heavy-Ion Science / Ed. Bromley D.A. Springer, Boston, MA, 1985
Berendsen H.J.C., Postma J.P.M., van Gunsteren W.F., DiNola A., Haak J.R. // J. Chem. Phys. 1984. V. 81. P. 3684. https://doi.org/10.1063/1.448118
Aurenhammer F. // ACM Computing Surveys. 1991. V. 23. № 3. P. 345. https://doi.org/10.1145/116873.116880
Ullah M.W., Kuronen A., Nordlund K., Djurabekova F., Karaseov P.A., Titov A.I. // J. Appl. Phys. 2012. V. 112. P. 043517. https://doi.org/10.1063/1.4747917
Aoki T. // J. Comput. Electron. 2014. V. 13. P. 108. https://doi.org/10.1007/s10825-013-0504-5