Cathodoluminescence studies of exciton diffusion in gallium nitride

Resumo

Gallium nitride is used as an example to show the possibilities of the application of a developed threedimensional mathematical model in the cathodoluminescence studies of direct-gap semiconductor materials using the time-of-flight procedure for obtaining quantitative information on their properties. The values of the diffusion coefficient in gallium nitride are determined from the results of its experimental studies.