Cathodoluminescence studies of exciton diffusion in gallium nitride
- Авторы: Polyakov A.N.1, Stepovich M.A.1,2, Turtin D.V.2
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Учреждения:
- Tsiolkovsky Kaluga State University
- Plekhanov Russian University of Economics
- Выпуск: Том 10, № 3 (2016)
- Страницы: 563-566
- Раздел: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/188898
- DOI: https://doi.org/10.1134/S1027451016030149
- ID: 188898
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Аннотация
Gallium nitride is used as an example to show the possibilities of the application of a developed threedimensional mathematical model in the cathodoluminescence studies of direct-gap semiconductor materials using the time-of-flight procedure for obtaining quantitative information on their properties. The values of the diffusion coefficient in gallium nitride are determined from the results of its experimental studies.
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Об авторах
A. Polyakov
Tsiolkovsky Kaluga State University
Автор, ответственный за переписку.
Email: Andrei-polyakov@mail.ru
Россия, Kaluga, 248023
M. Stepovich
Tsiolkovsky Kaluga State University; Plekhanov Russian University of Economics
Email: Andrei-polyakov@mail.ru
Россия, Kaluga, 248023; Ivanovo Branch, Ivanovo, 153025
D. Turtin
Plekhanov Russian University of Economics
Email: Andrei-polyakov@mail.ru
Россия, Ivanovo Branch, Ivanovo, 153025
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