电邮这篇文章 Cathodoluminescence studies of exciton diffusion in gallium nitride
- 作者: Polyakov A.N.1, Stepovich M.A.1,2, Turtin D.V.2
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隶属关系:
- Tsiolkovsky Kaluga State University
- Plekhanov Russian University of Economics
- 期: 卷 10, 编号 3 (2016)
- 页面: 563-566
- 栏目: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/188898
- DOI: https://doi.org/10.1134/S1027451016030149
- ID: 188898
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详细
Gallium nitride is used as an example to show the possibilities of the application of a developed threedimensional mathematical model in the cathodoluminescence studies of direct-gap semiconductor materials using the time-of-flight procedure for obtaining quantitative information on their properties. The values of the diffusion coefficient in gallium nitride are determined from the results of its experimental studies.
作者简介
A. Polyakov
Tsiolkovsky Kaluga State University
编辑信件的主要联系方式.
Email: Andrei-polyakov@mail.ru
俄罗斯联邦, Kaluga, 248023
M. Stepovich
Tsiolkovsky Kaluga State University; Plekhanov Russian University of Economics
Email: Andrei-polyakov@mail.ru
俄罗斯联邦, Kaluga, 248023; Ivanovo Branch, Ivanovo, 153025
D. Turtin
Plekhanov Russian University of Economics
Email: Andrei-polyakov@mail.ru
俄罗斯联邦, Ivanovo Branch, Ivanovo, 153025
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