Analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF 2 /Si/CaF 2  structures

A. A. Velichko; V. A. Ilyushin; A. U. Krupin; V. A. Gavrilenko; N. I. Filimonova

doi:10.1134/S1027451016050165

Analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF₂/Si/CaF₂ structures

Авторы: Velichko A.A.¹, Ilyushin V.A.¹, Krupin A.U.¹, Gavrilenko V.A.¹, Filimonova N.I.¹
Учреждения:
1. Novosibirsk State Technical University
Выпуск: Том 10, № 5 (2016)
Страницы: 912-916
Раздел: Article
URL: https://journals.rcsi.science/1027-4510/article/view/189623
DOI: https://doi.org/10.1134/S1027451016050165
ID: 189623

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The results of analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF₂/Si(111) structures in a wide temperature range from 100 to 600°С are presented. It is shown that the preliminary formation of a 2D Si buffer layer provides the two-dimensional growth of CaF₂ layers. Possible reasons which for the disruption of 2D growth at high substrate temperatures are discussed.