Analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF2/Si/CaF2 structures
- Авторлар: Velichko A.A.1, Ilyushin V.A.1, Krupin A.U.1, Gavrilenko V.A.1, Filimonova N.I.1
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Мекемелер:
- Novosibirsk State Technical University
- Шығарылым: Том 10, № 5 (2016)
- Беттер: 912-916
- Бөлім: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/189623
- DOI: https://doi.org/10.1134/S1027451016050165
- ID: 189623
Дәйексөз келтіру
Аннотация
The results of analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF2/Si(111) structures in a wide temperature range from 100 to 600°С are presented. It is shown that the preliminary formation of a 2D Si buffer layer provides the two-dimensional growth of CaF2 layers. Possible reasons which for the disruption of 2D growth at high substrate temperatures are discussed.
Авторлар туралы
A. Velichko
Novosibirsk State Technical University
Хат алмасуға жауапты Автор.
Email: vel6049@mail.ru
Ресей, Novosibirsk, 630073
V. Ilyushin
Novosibirsk State Technical University
Email: vel6049@mail.ru
Ресей, Novosibirsk, 630073
A. Krupin
Novosibirsk State Technical University
Email: vel6049@mail.ru
Ресей, Novosibirsk, 630073
V. Gavrilenko
Novosibirsk State Technical University
Email: vel6049@mail.ru
Ресей, Novosibirsk, 630073
N. Filimonova
Novosibirsk State Technical University
Email: vel6049@mail.ru
Ресей, Novosibirsk, 630073
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