Analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF 2 /Si/CaF 2  structures

A. A. Velichko; V. A. Ilyushin; A. U. Krupin; V. A. Gavrilenko; N. I. Filimonova

doi:10.1134/S1027451016050165

Analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF₂/Si/CaF₂ structures

Authors: Velichko A.A.¹, Ilyushin V.A.¹, Krupin A.U.¹, Gavrilenko V.A.¹, Filimonova N.I.¹
Affiliations:
1. Novosibirsk State Technical University
Issue: Vol 10, No 5 (2016)
Pages: 912-916
Section: Article
URL: https://journals.rcsi.science/1027-4510/article/view/189623
DOI: https://doi.org/10.1134/S1027451016050165
ID: 189623

Cite item

Full Text

Open Access
Restricted Access

Access granted
Restricted Access

Subscription Access

Abstract
About the authors
References
Supplementary files
Statistics

Abstract

The results of analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF₂/Si(111) structures in a wide temperature range from 100 to 600°С are presented. It is shown that the preliminary formation of a 2D Si buffer layer provides the two-dimensional growth of CaF₂ layers. Possible reasons which for the disruption of 2D growth at high substrate temperatures are discussed.