Emission Theory of Amorphous Material Sputtering: the Dependence of the Sputtering Coefficient on the Angle of Primary Ion Beam Incidence


Citar

Texto integral

Acesso aberto Acesso aberto
Acesso é fechado Acesso está concedido
Acesso é fechado Somente assinantes

Resumo

The dependences of the sputtering coefficient on the types of accelerated ions, their energy, and the angle of incidence on a target are calculated. For Ar–Si, Хе–С, and H–W systems, acceptable coincidence between the calculated and experimental data is obtained. Two mechanisms for secondary-particle ejection from solids are established; they determine the dependences of the base sputtering coefficient for the base on the energy and the angle of primary ion incidence on the target.

Sobre autores

A. Pustovit

Institute of Microelectronic Technology and High-Purity Materials

Autor responsável pela correspondência
Email: pustan@ipmt-hpm.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432

Arquivos suplementares

Arquivos suplementares
Ação
1. JATS XML

Declaração de direitos autorais © Pleiades Publishing, Ltd., 2018