Emission Theory of Amorphous Material Sputtering: the Dependence of the Sputtering Coefficient on the Angle of Primary Ion Beam Incidence
- Autores: Pustovit A.N.1
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Afiliações:
- Institute of Microelectronic Technology and High-Purity Materials
- Edição: Volume 12, Nº 5 (2018)
- Páginas: 918-922
- Seção: Article
- URL: https://journals.rcsi.science/1027-4510/article/view/195977
- DOI: https://doi.org/10.1134/S1027451018050142
- ID: 195977
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Resumo
The dependences of the sputtering coefficient on the types of accelerated ions, their energy, and the angle of incidence on a target are calculated. For Ar–Si, Хе–С, and H–W systems, acceptable coincidence between the calculated and experimental data is obtained. Two mechanisms for secondary-particle ejection from solids are established; they determine the dependences of the base sputtering coefficient for the base on the energy and the angle of primary ion incidence on the target.
Sobre autores
A. Pustovit
Institute of Microelectronic Technology and High-Purity Materials
Autor responsável pela correspondência
Email: pustan@ipmt-hpm.ac.ru
Rússia, Chernogolovka, Moscow oblast, 142432
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