Emission Theory of Amorphous Material Sputtering: the Dependence of the Sputtering Coefficient on the Angle of Primary Ion Beam Incidence

Аннотация

The dependences of the sputtering coefficient on the types of accelerated ions, their energy, and the angle of incidence on a target are calculated. For Ar–Si, Хе–С, and H–W systems, acceptable coincidence between the calculated and experimental data is obtained. Two mechanisms for secondary-particle ejection from solids are established; they determine the dependences of the base sputtering coefficient for the base on the energy and the angle of primary ion incidence on the target.