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卷 13, 编号 6 (2019)
Dependence of the Kinetics of Radiation-Induced Defect Formation on the Energy Absorbed by Si and SiC when Exposed to Fast Charged Particles
Kozlovski V., Vasil’ev A., Emtsev V., Oganesyan G., Lebedev A.
PDF
(Eng)
卷 10, 编号 4 (2016)
Effect of recoil atoms on radiation-defect formation in semiconductors under 1–10-MeV proton irradiation
Kozlovski V., Vasil’ev A., Lebedev A.
PDF
(Eng)
卷 13, 编号 2 (2019)
Study of the Processes of Mesoporous-Silicon Carbonization
Gusev A., Kargin N., Ryndya S., Safaraliev G., Siglovaya N., Sultanov A., Timofeev A.
PDF
(Eng)
卷 13, 编号 2 (2019)
PLD Grown SiC Thin Films on Al2O3: Morphology and Structure
Kargin N., Gusev A., Ryndya S., Timofeev A., Grekhov M., Siglovaya N., Antonenko S.
PDF
(Eng)
卷 13, 编号 1 (2019)
Role of the Carbon Sublattice in n-SiС Conductivity Compensation
Kozlovski V., Vasil’ev A., Davidovskaya K., Lebedev A.
PDF
(Eng)
卷 11, 编号 1 (2017)
Investigation of stacking faults introduced into 4H-SiC crystals by indentation
Orlov V., Yakimov E.
PDF
(Eng)
卷 11, 编号 5 (2017)
Radiation resistance of 4H-SiC Schottky diodes under irradiation with 0.9-MeV electrons
Lebedev A., Davydovskaya K., Strelchuk A., Kozlovski V.
PDF
(Eng)
卷 10, 编号 4 (2016)
Kinetics of the formation of pores and a change in the properties of materials in numerical models
Zmievskaya G., Bondareva A.
PDF
(Eng)
卷 13, 编号 2 (2019)
Thermodynamic Analysis of Interface-Interaction Processes in a Silicon/Silicon Carbide Structure during Electron-Beam Treatment
Gusev E., Avdeev S., Ageev O.
PDF
(Eng)
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